| 1 |
G. Dutta, N. DasGupta, and A. DasGupta, Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs, IEEE Transactions on Electron Devices, 63, 1450-1458, 2016 |
| 2 |
N. Karumuri, G. Dutta, N. DasGupta, and A. DasGupta, A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization, IEEE Transactions on Electron Devices, 63, 4226-4232, 2016 |
| 3 |
M. Shukla, G. Dutta, R. Mannam, and N. DasGupta, Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC, Thin Solid Films, 607, 1-6, 2016 |
| 4 |
G. Dutta, S. Turuvekere, N. Karumuri, N. DasGupta, and A. DasGupta, Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs, IEEE Transactions on Electron Devices, 63, 4693-4701, 2016 |
| 5 |
Dutta G., Turuvekere S. , Karumuri N. , Dasgupta N. , Dasgupta A, Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT, IEEE Electron Device Letters, 35, 1085-1087, 2014 |
